Finwave announces $8.2m funding
GaN innovator Finwave Semiconductor has announced a new $8.2m bridge investment round, led by Fine Structure Ventures, Engine Ventures, and Safar Partners – with strategic participation from technology partner GlobalFoundries.
Finwave will use this investment to accelerate revenue generation, expand its product portfolio and continue developing GaN-on-Si technology for high-power RF switches, power amplifiers for communications infrastructure, and power amplifiers for mobile devices.
“We are emboldened by the support of our investors, who share our belief in the commercial potential of our technology,” said Pierre-Yves Lesaicherre, CEO of Finwave. “This funding round validates the years of engineering and innovation behind our proprietary GaN-on-Si technology and provides resources we need to move from the development phase to delivering differentiated, high-performance products. More than just funding, this is a clear endorsement of our direction – and a strong signal that the industry believes in the path we’re on.”
“Since our initial investment, Finwave has made remarkable progress towards becoming a leader in GaN-on-Si high-performance RF components,” said Jennifer Uhrig, senior managing director, Fine Structure Ventures. “Their strategic foundry partnership with GlobalFoundries and distribution partnership with RFMW have been particularly notable, legitimising their design capabilities and giving customers confidence in Finwave’s ability to bring high-performance, reliable products to market.”
