Infineon sues Innoscience for GaN patent infringement
Infineon is seeking a permanent injunction
Infineon has filed a patent infringement lawsuit against Innoscience (Zhuhai) Technology Company, and Innoscience America.
The lawsuit, filed in the district court of the Northern District of California, concerns a US Infineon patent covering core aspects of the company's GaN power semiconductors around reliability and performance. Infineon is seeking a permanent injunction against Innocence.
Infineon alleges that Innoscience infringes the Infineon patent by making, using, selling, offering to sell and/or importing into the United States various products, including GaN transistors for numerous applications, within automotive, data centres, solar, motor drives, consumer electronics, and related products used in automotive, industrial, and commercial applications.
“The production of GaN power transistors requires completely new semiconductor designs and processes”, said Adam White, president of Infineon’s Power & Sensor Systems Division. “With nearly two decades of GaN experience, Infineon can guarantee the outstanding quality required for the highest performance in the respective end products. We vigorously protect our intellectual property and thus act in the interest of all customers and end users.”
Infineon claims to lead the industry with its GaN patent portfolio, comprising around 350 patent families.
