CGD to show latest ICeGaN developments at PCIM
Cambridge GaN Devices (CGD) will demonstrate at PCIM how GaN technology is delivering improved performance in higher power applications.
A highlight will be the company’s world’s-first Combo ICeGaN innovation which pairs the company’s ICeGaN GaN ICs with IGBTs to address electric vehicle inverters at 100kW+, improving efficiency over traditional silicon solutions and reducing cost when compared with SiC solutions.
Henryk Dabrowskim SVP of global sales said: “ICeGaN redefines GaN. By integrating the interface circuitry on the GaN chip along with the HEMT, ICeGaN is very easy to use. Devices can be easily driven using a standard power IC driver. Moreover, it is very rugged and robust, and includes extra protection circuitry, so reduces component count.
"Engineers are now understanding the true value proposition of ICeGaN, and are beginning to realise that GaN may replace SiC in certain high efficiency designs, due to its lower manufacturing cost. PCIM attracts key professionals from all over the world, and we are looking forward to showing them what ICeGaN can do, especially for higher power applications.”
During PCIM, CGD will give the following presentations about ICeGaN:
'ICeGaN benefits in Motor Drive Inverters through the evaluation of Electrical Performance under Application Conditions': Speaker: Farhan Beg, director of application engineering, CGD, Tuesday May 6th 2025.
'ICeGaN Leads GaN Integration for High-Power Applications' Speaker: Henryk Dabrowski, SVP, Global Sales, CGD Wednesday May 7th 2025.
