Onsemi Introduces GaNEXUS GaN portfolio
Onsemi has launched GaNEXUS, a new GaN power portfolio engineered to deliver higher efficiency, greater power density, and improved thermal performance across AI data centres, industrial automation, robotics, and energy infrastructure applications.
The initial portfolio includes GaNEXUS FETs sampling across voltage ranges from 40V to 650V, including 650V GaNEXUS Smart, GaN FETs with integrated protection features, to simplify system integration and improve reliability.
When combined with Onsemi’s Treo Platform for integrated sensing, control, protection, and power management, GaNEXUS enables smarter, more reliable, and more robust system-level power solutions, according to the company.
In low- and medium-voltage systems, including AI server 48V intermediate bus converter (IBC) and battery backup units (BBU) and motor drives, GaNEXUS enables around 30–60 percent smaller magnetics; 1.5x–2x higher power density; and 0.5–2 percent efficiency improvement, depending on topology.
In higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, PFC, and LLC power stages, GaNEXUS enables up to ~60 percent reduction in magnetics size in high-frequency AC‑DC and resonant stages; 1.5x–2x higher power density in PFC, LLC, and HV DC‑DC architectures; and 0.5–1 percent efficiency gains with meaningful thermal and operating-cost impact at scale.
GaNEXUS devices feature thermally enhanced packages with industry-standard footprints for dual sourcing, like TOLL Bottom Cooling, TOLT Top Cooling, and dual cooling 3.3mm x 3.3mm and 5mm x 6mm packages.
“Our GaNEXUS portfolio is enabling new architectures for power system design,” said Antoine Jalabert, vice president of the GaN division at Onsemi. “As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures.”
