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Wednesday 31st August 2011
Several of Veeco's key customers in Greater China and important local government officials were among Veeco's honoured guests.
Wednesday 31st August 2011
The firm will hold a live demonstration of its WaveShaper multiport optical processor for system test applications.
Wednesday 31st August 2011
The focus of the Manz display taking place at the EU PVSEC 2011 Industry Trade Show in Hamburg from September 5th to 8th, 2011 (Hall A1, Booth B1), is on the latest developments in CIGS thin-film technology.
Wednesday 31st August 2011
The multitasking device incorporates the firm’s advanced gallium nitride HEMT technology.
Wednesday 31st August 2011
The District Court Düsseldorf prosecuted TRG for selling white LEDs online after removing the product from its shelves.
Tuesday 30th August 2011
Global Solar Energy is expanding its manufacturing facilities and planning on moving from a two-shift rotation to a three-shift operation at the beginning of the third quarter.
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Tuesday 30th August 2011
The Taiwanese company has ordered a number of CRIUS II reactors for gallium nitride LED production.
Tuesday 30th August 2011
The successful development and market launch of Indium gallium phosphide, indium gallium arsenide and germanium based solar cells by Azur Space, Soitec and Fraunhofer ISE have been acknowledged.
Tuesday 30th August 2011
The EPC9005, used in conjunction with the firm’s enhancement-mode gallium nitride (eGaN) FETs, facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014.
Tuesday 30th August 2011
The firm has spent $6.5 million in order to expand its sales to gallium nitride LED manufacturers.
Friday 26th August 2011
The company has been nominated for its aluminium gallium nitride UV-LED innovations.
Friday 26th August 2011
Specifically designed for patterned sapphire substrate inspection, the firm’s latest Atomic Force Microscope (AFM) for advanced production metrology is designed for 2 to 6 inch wafers.
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Thursday 25th August 2011
The 850nm gallium arsenide based LED is suited for use in compact illumination units for CMOS and CCD cameras. Possible applications range from spotlights for IR cameras and CCTV systems via machine vision solutions to number plate recognition.
Thursday 25th August 2011
The cadmium telluride solar cell manufacturer says that its leadership team has confidence in the company's long-term growth prospects and its ability to develop new markets.
Thursday 25th August 2011
The number of base station sector shipments, which use gallium arsenide based technology, will increase to slightly more than 9.2 million in 2015 where more than half of these sectors will be for lower power, smaller cells.
Wednesday 24th August 2011
The innovator of indium gallium arsenide solar cells also intends to branch out and look into developing cheaper next-generation thin-film structures such as CIGS.
Wednesday 24th August 2011
The telecom solutions provider will be presenting its latest results in New York and Las Vegas on 8th and 14th September respectively.
Wednesday 24th August 2011
Based at the Group’s Singapore facility, Norio Hayafuji will provide customers with a technical focus for IQE’s wireless, optoelectronic and photovoltaic products across the APAC area.
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Wednesday 24th August 2011
Anderson has a varied background and run accounting organisations with only 5 employees and as many as 140 in over 14 different countries.
Tuesday 23rd August 2011
The facility in Hong Kong is aimed at demonstrating the firm's indium phosphide digital optical network innovation as Infinera expands in the APAC.
Tuesday 23rd August 2011
The award for enterprise was based on the firm’s comprehensive product range addressing a wide spread of markets combined with an aggressive strategy of developing new markets, primarily in Asia.
Tuesday 23rd August 2011
The simplified techniques require fewer expensive and complex processing operations of silicon germanium via filling and offer IC manufacturers potential cost and cycle time improvements.
Tuesday 23rd August 2011
One of the devices that ZTE will incorporate in its products is the EDGE RF subsystem, which employs the firm’s indium gallium phosphide HBT technology.
Tuesday 23rd August 2011
The second generation 40 Volt, 16 milliohm EPC2014 gallium nitride transistor delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

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