To bypass the problem of unruly nanowires, scientists deliberately cut sapphire along different crystal planes on which they grew gallium nitride nanowires. This resulted in various surface patterns including “steps” of nanometre dimensions between the different planes, as well as accordion-like, V-shaped grooves.
The one day workshop, taking place in Grenoble, France on Tuesday 18th October, will offer a broad insight into research solutions and results and will include discussions on III-V etch for nanowire applications.
The firm wants an export ban against LG LED products out of Korea. The LED giant has also filed nullity suits and infringement actions against LG and Samsung, in particular for what it says is patent infringement on its white light LED technology.
The new module, which incorporates an 850 nm gallium arsenide based VCSEL, is claimed to increase port density and deliver twice the data bandwidth of the current generation of fibre channel devices at nearly the same power level.
The firm’s products, which include silicon carbide transistors, are suited to solar inverters, hybrid electric vehicles, industrial motors, computing and defence are now available globally through Premier Farnell.
IMS Research has lowered its 2011 gallium nitride MOCVD forecast by 24% to 833 reactors, which still represents 4% growth over 2011. In 2012, China is expected to continue to dominate the market for GaN MOCVD tools, market, but shrink to 61% in Q4’12 as Taiwan and Korea rebound.