Loading...
News Article

University of Glasgow joins forces with China to promote optoelectronics

News
Partnership to develop an international base in Lingang area of Shanghai


The University of Glasgow has signed a partnership agreement with a Chinese state-owned enterprise company to develop an international optoelectronics industry base in the Lingang area of Shanghai.

A Memorandum of Understanding was signed earlier this year by the University and senior representatives of the Shanghai Lingang Science and Technology Innovation City Economic Development Co. Ltd - a subsidiary of the Lingang Group which specialises in industrial park development - and the Shanghai Shunmao Information Technology Co., a private company established to manage and commercialise some of the technology which will be developed by this exciting new initiative.

John Marsh, professor of optoelectronic systems and dean of the University of Glasgow-University of Electronic Science and Technology of China (UESTC) Partnership, attended an inaugural event at Lingang representing the University of Glasgow.

The agreement has led to the establishment of the Shanghai Lingang International Photonic Integrated Circuit Joint Laboratory (PIC Lab) which will foster collaboration between the University of Glasgow and its partners in Lingang.

PIC Lab aims to accelerate the development and commercialisation of optoelectronic integrated chip technology, integrating multiple optical components on a single chip and packaging the chips with high-speed electronics, to address the demand for high speed network connections for the next generation of the Internet.

Marsh said: "The University of Glasgow is delighted to be working with our new partners to strengthen international links relating to optoelectronic devices and the development and integration of an optoelectronic integration platform and industry incubation base in Lingang. We shall also be working to create a Scottish platform. This is international recognition of Glasgow's long term commitment to optical research."

A spokesman for the Shanghai Lingang Science and Technology Innovation City Economic Development Company said the new PIC Lab would capitalise on the combination of domestic and foreign skills and resources to develop "an effective concentration of high-end technical and commercial talent in the field of photonics to deliver a world-leading, cutting-edge technology and industrial capital".

The partnership would also give clear leadership to the global PIC industry and offer a strong impetus to optoelectronic integrated chip technology research and development and attract further domestic and foreign optoelectronic talent technology, added the spokesman.

The Chinese partners plan to visit the University of Glasgow later this year to promote and cement the project.

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: