Ixys Introduces 1200V SiC MOSFET in SOT227
Power semiconductor firm Ixys has announced the availability of the IXFN50N120SK and the IXFN70N120SK both 1200V SiC MOSFETs in MiniBLOC (SOT-227) packages.
"With this addition to our SiC MOSFET portfolio, Ixys enables higher power applications for the SiC based products in switching and control for inverters, UPSs and for rapid charger solutions," commented Elmar Wisotzki, Director of Technology for Ixys Germany.
"One key aspect of the devices is using our matching assembly technology to harvest the full advantage of the Ixys' SiC power MOSFET. Ixys also offers the best driver ICs for such high power MOSFETs; thus we offer the total solution to our customers, to improve efficiency at best performance over cost ratio."
The IXFN50N120SK and IXFN70N120SK offer a 40mΩ (typ) and a 25mΩ (typ), respectively, SiC Mosfet with 1200V blocking voltage in MiniBLOC package featuring 3kV isolation to heat sink and an outstanding low thermal impedance.
This solution is based on heat spreading technology before isolation and the usage of AlN substrate as isolator to further enhance thermal performance and allow optimised cooling of SiC dies operated with highest power densities. Both new products provide a real Kelvin gate connection for optimised gate control.
