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Monday 7th March 2011
The firm will convert and expand its chip manufacturing capabilities at its Penang and Regensburg plants and convert from 4 inch to 6 inch wafer production.
Monday 7th March 2011
Harris was recognised for contributions to epitaxial growth of compound semiconductor materials and their applications. Rogers was acknowledged for novel electronic and optoelectronic devices and systems.
Monday 7th March 2011
European LED manufacturer Optogan welcomed Russia‘s President Dmitry Medvedev in the recently set up LED production plant in St. Petersburg.
Monday 7th March 2011
Of this amount, GT Solar will contribute $1 million and the company’s liability insurers will contribute the remaining $9.5 million.
Friday 4th March 2011
The firm claims it has achieved milestones that integrate GaAs and InGaP PV junctions using its standard six-inch semiconductor equipment.
Friday 4th March 2011
The firm’s Golden DRAGON Plus LEDs help illuminate the multi-dimensional bubble-like structures at the front of the building, attracting shoppers and tourists from afar.
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Friday 4th March 2011
New shares resulting from exercised options are not entitled for dividend for fiscal year 2010.
Friday 4th March 2011
Annual net income for 2010 was $ 8.9 million as compared to $ 19.4 million in 2009.
Friday 4th March 2011
Penn State University has developed, what it claims, is the first new type of optical fibre that contains, at its core, a high-purity crystalline compound of zinc selenide (ZnSe).
Friday 4th March 2011
The firm’s executives will showcase its high-speed optical networking products and will be presenting on three panels.
Friday 4th March 2011
The firms are extending their strategic agreement to move LED lighting forward in Europe.
Friday 4th March 2011
The source delivers more than 100 W CW At 2.45 GHz and offers excellent reflection measurement. The GaN transistor grown on SiC substrates achieves better than 62% efficiency.
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Thursday 3rd March 2011
The compact PM-QPSK InP devices integrate two matched 90 degree optical hybrids, four high speed balanced detector pairs and four differential linear TIAs with manual and automatic gain control.
Thursday 3rd March 2011
Growing the active region of the deep UV-LEDs under a liquid phase growth mode produces AlGaN alloys with a strong band structure potential fluctuations and LEDs with high internal quantum efficiency.
Thursday 3rd March 2011
Strategy Analytics says the compound semiconductor industry will see further growth in the next few months and anticipates that Philips Lumileds, Finisar, JDSU and Oclaro will continue to benefit from market conditions.
Thursday 3rd March 2011
The diode which is suitable for 43Gbps RZ-DQPSK transmission has an InP-based modulator which effectively minimises device size and power consumption.
Thursday 3rd March 2011
The technology, which makes it possible to monolithically integrate a wide number of electronic and optoelectronic functions onto a single GaAs chip, is estimated to be worth over $1 billion.
Thursday 3rd March 2011
The latest addition to the firm’s “Free Light” Line of Products delivers high performance optical transmission using the DPSK modulation format and is InP based.
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Wednesday 2nd March 2011
Infinera's InP monolithic PIC contains more than 150 optical components, which are all integrated onto a single chip smaller than a fingernail.
Wednesday 2nd March 2011
The Canton Tower, also known as the Guangzhou TV tower, is just one of the recent projects in China that has used LUXEON LEDs.
Wednesday 2nd March 2011
The presentations will be broadcast live via webcast and will be available on the Ultratech website.
Wednesday 2nd March 2011
The cluster tool will create advanced material libraries utilised in novel photovoltaic applications, as well as other applications.
Wednesday 2nd March 2011
Travel ranges from 100 mm to 1.5 m, Acceleration capability up to 5 g, Velocity capability up to 5 m/s, Maximum continuous force output up to 270.7 N, Maintenance free, direct drive, zero-cogging motor and noncontact optical linear encoder
Wednesday 2nd March 2011
NIST researchers have shown that electron beam lithography and etching can produce quantum dots which can be shaped and positioned more reliably than dots made with conventional crystal growth methods.

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