Loading...
News Article

VisIC adds new 650V Half-Bridge Evaluation Board

GaN Power ALL Switch  board demonstrates 98.5 percent power conversion efficiency at 200kHz

VisIC Technologies has announced a new half-bridge evaluation board using its VT15R65A GaN Power ALL Switch (Advanced Low Loss Switch) in a "˜work horse' half-bridge power conversion circuit. 

The VT15R65A-EVBHB demonstrates 98.5 percent power conversion efficiency operating at a switching frequency of 200kHz. Silicon MOSFET-based systems demonstrating similar efficiencies in this power range are limited to operation at 60kHz or less, and competitive GaN devices have only shown similar efficiency at 100kHz.

According to the company, the evaluation board can be easily configured into any half bridge-based topology such as synchronous boost or buck conversion.  The board can also operate in a pulsed switching configuration for evaluating transistor waveforms. The VisIC's GaN ALL Switch is driven by standard industry high frequency drivers.

Providing power conversion system designers with a complete, working power stage, the evaluation board includes high-frequency drivers for two VT15R65A power switches in a half-bridge configuration, the gate driver power supply, and a heat sink.

VT15R65A, with the lowest Rdson among 650V GaN transistors or switches, achieves extremely efficient power conversion with switching transitions exceeding 100V/nS.

The VT15R65A-EVBHB configured as shipped with VIN up to 400VDC supports 2kW loads. The board has a built-in planar inductor but also provides connections for external power inductors and capacitors to allow users to operate the board in higher power modes.

The user needs to provide an external 15VDC AUX voltage at a two-pin input. On-board voltage regulators to create the required voltages for the logic circuits and gate drives. The high voltage DC BUS input is connected using screw connections and the output bus is also connected via screw type connection.

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: