Wolfspeed GaN RF Devices meet NASA space standards
Wolfspeed, a Cree Company, has announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems.
Wolfspeed partnered with RF and microwave firm KCB Solutions to conduct a comprehensive testing program to demonstrate that Wolfspeed's GaN-on-SiC devices meet NASA EEE-INST-002 Level 1 reliability and performance standards, derived from the MIL-STD requirements for Class S and Class K qualifications.
"This successful testing demonstrates that Wolfspeed's GaN foundry process is capable of producing devices that meet these demanding reliability standards. Our customers now have the ability to specify our GaN RF devices in the most critical aerospace, military, and satellite electronics systems," said Jim Milligan, RF and microwave director, Wolfspeed.
"Our proven GaN-on-SiC technology enables design engineers to make smaller, lighter, more efficient, and more reliable solid-state power amplifiers than are possible with conventional traveling wave tube (TWT) amplifiers or those designed with GaAs devices. Now, aerospace designers can achieve higher performance radar and communications systems with a significantly lighter payload and longer operating life."
"As an AS9100-certified facility with an extensive history of supplying Class S and Class K devices for aerospace and satellite electronic systems, KCB Solutions implemented a comprehensive testing program in conjunction with Wolfspeed to ensure that their GaN process was capable of producing devices that meet these demanding NASA standards," said Ralph Nilsson, president, KCB Solutions.
"This testing regime was derived from the established MIL-STD qualification requirements of Class S and Class K, and included evaluation for ESD, intrinsic reliability, SEM analysis, and radiation hardness."
The testing program consisted of five test procedures conducted by KCB Solutions on Wolfspeed's 25W GaN-on-SiC HEMT CGH40025F and their 25W 2-Stage X-Band GaN MMIC CMPA801B025F devices, which are produced using the company's 0.4µm G28V3 fabrication process. Both devices demonstrated no significant RF performance change after undergoing all the test procedures, including exposure to a cumulative dose of radiation exceeding 1Mrad.
Wolfspeed's collaboration with KCB Solutions allows them to upscreen their GaN devices to ensure they are in compliance with the NASA EEE-INST-002 level 1 standards based on these Class S and Class K requirements. As a result of this successful testing at KCB Solutions, several companies have already specified Wolfspeed's GaN devices for their space applications.
