Cissoid delivers SiC power module to Thales Avionics
Prototype SiC MOSFET module designed to increase power converter density in More-Electrical Aircrafts
Cissoid, a Belgian firm focused on high temperature semiconductor solutions, has announced the delivery of the first prototypes of a three-phase 1200V/100A SiC MOSFET Intelligent Power Module (IPM) to Thales Avionics Electrical Systems.
The module, developed with the support of Clean Sky Joint Undertaking, has been designed to increasing power converters density by decreasing weight and size, for power generation and electromechanical actuators in More-Electrical Aircrafts.
This IPM is said to offer an optimal integration of the gate driver with power transistors together in order to take advantage of the full benefits of SiC's low switching losses and high operating temperature.
Using a HADES2 isolated gate driver, it combines advanced packaging technologies enabling a reliable operation of power modules in extreme conditions.
For this Aerospace module, a three-phase power inverter topology was selected while other topologies are being investigated for HEV and Railways projects. In this topology, each of the six switch positions includes a 100A SiC MOSFET transistor and a 100A SiC Schottky free-wheeling diode.
These devices can block voltages up to 1200V, which provide enough headroom against overvoltages in a 540V Aerospace DC bus, and the module is designed to be easily upgraded with 1700V/150A SiC devices. The transistors have a typical On resistance of 12.5mOhms or 8.5mOhms depending on their current rating, either 100A or 150A.
Co-designing the gate driver with the power module in a single IPM allowed Cissoid to optimise the gate driver circuit taking into account parasitic inductances of the power module while minimising them when possible.
An IPM also offers a plug-and-play solution to power electronic designers who save time in the design of the gate driver board, which is particularly challenging with SiC transistors. They can then focus on the design of high density power converters taking advantage of SiC.
