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Tuesday 12th December 2017
EPC will demonstrate a desktop that can power multiple devices anywhere on the surface up to a power consumption of 300W
Monday 11th December 2017
KABRA!zen laser slicing technology improves throughput by 50 percent
Monday 11th December 2017
Manufacturer of synthetic sapphire gets highest grade supplier approval classification
Monday 11th December 2017
GaN Systems plans to use the funding to expand sales and accelerate product innovation
Friday 8th December 2017
Company proceeds towards trial against SGL and plans to appeal against AMEC's patent counter ciaim
Friday 8th December 2017
High voltage vertical transistor design could drastically reduce energy waste
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Friday 8th December 2017
Company looks forward to ramping up Texas VCSEL array production facility next year
Friday 8th December 2017
Asia-Pacific region is expected to witness the fastest growth for GaN semiconductor devices during the period from 2016 to 2024
Friday 8th December 2017
A new UK project, CS-MAGIC, is set to thrust wide bandgap magnetic field sensors into the commercial limelight, reports Rebecca Pool.
Thursday 7th December 2017
Bonding single-crystal diamond to a SiC substrate at room temperature dissipates power in GaN HEMTs to increase radar range
Thursday 7th December 2017
Focus Lightings orders multiple TurboDisc EPIK 868 systems to boost production
Thursday 7th December 2017
Toshiba describes process for reducing impurities in the gate dielectric of GaN MOSFETs at IEDM
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Thursday 7th December 2017
Fujitsu indicates that using this technology for heat dissipation allows high-efficiency cooling of high-power gallium nitride (GaN) high-electron-mobility transistors (HEMTs), enabling stable operations of power amplifiers at high power levels.
Wednesday 6th December 2017
Japanese university to use MBE system for compound semiconductor microstucture research
Wednesday 6th December 2017
Rensselaer Polytechnic Institute study demonstrates high yields and nutritional quality of leafy greens with SunPlus LEDs
Wednesday 6th December 2017
Quantum waltz of electrons hints at the next generation of chips
Wednesday 6th December 2017
Knowledge sharing will ensure open access to high volume PIC packaging through PIXAPP Pilot Line
Wednesday 6th December 2017
Prototype transmit/receive module on single 6x6 mm chip will deliver miniaturised space radar systems for future missions
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Wednesday 6th December 2017
German consortium aims to produce first high power AlGaN-based UV-C and UV-B LEDs by 2020
Wednesday 6th December 2017
Air Force Research Laboratory researchers use boron nitride to transfer GaN circuits to flexible substrates
Wednesday 6th December 2017
CMOS compatibility with silicon photonics lowers fabrication costs and provides access to mature and large-scale facilities
Wednesday 6th December 2017
XLamp XD16 LED first to surpass 280 lm/mm2 lumen density
Tuesday 5th December 2017
Mitsubishi and University of Tokyo are first to quantify electron scattering mechanisms in SiC power devices to reduce energy consumption
Tuesday 5th December 2017
Researchers have made a fully transparent thin-film transistor consisting of a MoS2 monolayer; HfO2, which is used for coating; and aluminum-doped zinc oxide (AZO) contacts

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