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Friday 2nd March 2018
High volume semiconductor device manufacturers order more than 600 of Oxford Plasma Technology's process modules
Thursday 1st March 2018
Canadian start-up to demonstrate 400GB/s transmission over 80km with ADVA Optical Networking
Thursday 1st March 2018
Penn State team discover why synthetic 2D materials often perform orders of magnitude worse than predicted
Thursday 1st March 2018
SERENA project to develop GaN-on silicon prototype for beamforming in mm-wave multi-antenna arrays
Thursday 1st March 2018
HELCATS project will develop semiconductor lasers to enable miniaturised atomic clocks using Strontium ions
Thursday 1st March 2018
Navitas announces mobile adapter design with five times greater power and twice the power density of standard chargers
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Thursday 1st March 2018
High-frequency and very high-power device packages are designed to meet the needs of 5G, IoT and advanced cellular technologies
Thursday 1st March 2018
Company is working with a leading tooling provider to supply several of its international manufacturing sites
Thursday 1st March 2018
IQE selected as winner from entrants across the UK
Thursday 1st March 2018
Acquisition price represents a total equity value of about $8.35 billion
Wednesday 28th February 2018
Scientists demonstrate photoluminescence with a laser excitation wavelength of 473 nm and 632.8 nm
Wednesday 28th February 2018
Revenues rose by 17 percent year-on-year to €230.4m with a net profit of €6.5m
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Wednesday 28th February 2018
MoS2-based 'memtransistor' can process information and store memory with one device
Wednesday 28th February 2018
Growing nanocrystals of GaAs on tiny columns of silicon and germanium could lead to new types of sensors, LEDs, and solar cells
Wednesday 28th February 2018
120A, 650V GaN E-HEMT increases the power density of 20 to 500 kW power conversion systems
Wednesday 28th February 2018
Mercury team brings over 25 years of experience in specialty semiconductor processing
Tuesday 27th February 2018
Fourth generation Luxeon CoB Core range leads the industry in 90CRI with a 12 percent increase over previous generation
Tuesday 27th February 2018
New SiC MOSFETs and Schottky barrier diodes target industrial and automotive markets
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Tuesday 27th February 2018
New evaluation system combines 100V E-Mode GaN transistor and high-speed driver to provide sub nano-second switching
Monday 26th February 2018
Global device market to be worth $1890.2 million by 2023
Monday 26th February 2018
Company to show devices for 26 GHz, 28 GHz and 39 GHz systems
Monday 26th February 2018
Pilot line for laser-thinning advanced SiC, GaN, and sapphire wafers already processing customer substrates
Monday 26th February 2018
Siltectra validates new process by producing a GaN on SiC HEMT device on a split-off (or twinned) wafer at its new facility in Dresden

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