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Monday 4th December 2017
Imec's Ga-doped Ge-rich source/drain contacts are promising for suppressing parasitic source/drain resistance in advanced pMOS devices
Monday 4th December 2017
GALOIS Series uses bright-field confocal optics, enabling high-speed inspection of various kinds of GaN wafer defects and high-resolution observation of defect images
Monday 4th December 2017
Japan Aerospace Exploration Agency places third order superlight thin-film solar panel for Jupiter deployment demo
Friday 1st December 2017
Parent company of III-V foundry CST GLobal starts trading shares on Nordic trading facility
Friday 1st December 2017
Company to exhibit technologies for a new generation of mobile and consumer power solutions
Friday 1st December 2017
Full SiC power modules will support further improvements in electric-powered car’s performance under racing conditions
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Thursday 30th November 2017
Researchers show how the interface polarisation of III-nitride heterojunctions can be engineered by employing BAlN and BGaN alloys
Thursday 30th November 2017
World’s first series production car with autonomous driving features uses SiGe RASIC chips in the front and corner radar
Thursday 30th November 2017
US team develops new class of cybersecurity primitives around the structural randomness of 2D semiconductor MoS2
Thursday 30th November 2017
Ultra-fast transition eGaN FETs can enhance LiDAR accuracy, precision, and processing speed
Wednesday 29th November 2017
Perovskite-based device dynamically responds to sunlight by transforming from transparent to tinted while converting sunlight into electricity
Wednesday 29th November 2017
Chemicals industry veteran to lead specialty materials supplier
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Wednesday 29th November 2017
Longstanding customer adds multiple AIX 2800G4-TM MOCVD cluster tools to meet demand for ROY LEDs
Wednesday 29th November 2017
Japanese motion control and robotics firm funds further development of the GaN technology used in its latest servo motors
Wednesday 29th November 2017
'Joint Innovation Partner' award recognises strong collaborative relationship
Tuesday 28th November 2017
0.25μm process is now part of the European Preferred Part list supported by the European Space agency
Monday 27th November 2017
Thin-film transistor technology has potential to replace low temperature polysilicon for making OLEDs
Monday 27th November 2017
Chinese pure-wafer foundry selects Omega plasma etch solution for production of high power RF devices
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Monday 27th November 2017
Susannah Heck brings a wealth of technical experience in opto-electronic integration, device and process design to UK III-V fab
Monday 27th November 2017
Sterilisation LED technology has been 'advanced by two years' says company
Monday 27th November 2017
C and X-Band high IP3 I/Q mixer MMICs can be used as either image reject mixers or single sideband upconverters
Friday 24th November 2017
Infineon awarded for delivering SiGe LNAs of 'outstanding quality' for the Samsung Galaxy smartphone series
Friday 24th November 2017
2017 TechWorks award recognises the CSC's multiple collaborative R&D programme wins
Thursday 23rd November 2017
Michigan team use predictive modelling to show that adding boron to InGaN can keep electrons from becoming too crowded

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