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Thursday 3rd June 2010
Combining the technology of both firms will increase the portfolio of Silicon- and GaAs-based high performance products on the market.
Thursday 3rd June 2010
North American MBE and Veeco sponsor the ‘MBE Innovator Award’
Thursday 3rd June 2010
Fairchild Semiconductor's LED Drivers Enable Design Flexibility and Extend Battery Life in Mobile Handsets.
Wednesday 2nd June 2010
A new 4G filter technology has been launched by TriQuint Semiconductor.
Wednesday 2nd June 2010
PlasmaPro NGP 80 offers RIE, PECVD, ICP & RIE/PE for III-V etch processes suited to R&D and small-scale production.
Wednesday 2nd June 2010
Rubicon Technology Executives will give a presentation at the ‘Credit Suisse Future of Energy Conference 2010’ in Washington, DC.
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Wednesday 2nd June 2010
The Front End Module (FEM) integrates 2.4-2.5 GHz and 4.9-5.85GHz bands and is claimed to combine superior integration for use in mobile computing.
Wednesday 2nd June 2010
Company Executives will present at ‘UBS Global Technology and Services’ Conference in New York, on Tuesday, June 8, 2010, at 9:00 am Eastern Time.
Wednesday 2nd June 2010
New high-voltage GaN chips developed by Integra.
Wednesday 2nd June 2010
The MOCVD systems will be used for high brightness LED production.
Wednesday 2nd June 2010
The company says there has been a significant increase in requests for quotes on HCPV solar panels and ground-based and rooftop tracker systems since late 2008.
Tuesday 1st June 2010
UoC will use system for integrating synthetic nanomaterials with semiconductor nanowires.
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Tuesday 1st June 2010
Low Band Transmitter (LBT) designed to protect strike aircraft, ships, and ground troops by disrupting enemy radar and communications will aid US operations.
Friday 28th May 2010
The GaN-based HEMT has the world’s highest output of 12.9W and operates in the C, X and Ku Band ranges making it ideal for mobile communication over a wide area.
Friday 28th May 2010
Oclaro has announced a $7.5 million investment in ClariPhy.
Friday 28th May 2010
Riber has completed the sale of one of its products to an unnamed vendor.
Friday 28th May 2010
Company reports its Terahertz Monolithic Integrated Circuit (TMIC) operating at 0.67 terahertz (THz) more than doubles the frequency of the fastest reported integrated circuit.
Friday 28th May 2010
Unlike other THz diodes, this Schottky diode can be integrated with other passive components and eliminates unwanted parasitic elements from the wire bond
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Thursday 27th May 2010
Skyworks has announced design wins from MediaTek in support of dual and quad band platforms targeting low-cost handsets.
Thursday 27th May 2010
The 31 x 2” MOCVD systems will enable LDX (LongDeXin) to satisfy the GaN-HB-LED market for use in backlights.
Thursday 27th May 2010
The 18W and 30W products will be used in power amplifiers for microwave radios with the 30W GaAs FET providing 2x higher output power than its predecessor.
Wednesday 26th May 2010
This Gallium Nitride-on-silicon technology development effort is a direct result of customer requests for smaller, more efficient power devices with broadband performance.
Wednesday 26th May 2010
Microwave power MMIC is suited to RF-Microwave Pre-Amplifier Applications and supports C-band frequency from 5.65 to 8.50GHz
Wednesday 26th May 2010
High-Linearity Digitally-Controlled Variable Gain Amplifiers (DVGAs) suited to wireless infrastructure applications such as cellular base stations.

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