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Tuesday 26th April 2016
 Order intake and order backlog increased significantly in Q1/2016
Monday 25th April 2016
High-voltage GaN FET and driver solution can reduce switching losses by as much as 80 percent
Friday 22nd April 2016
EpiTT Gen3: x-ray diffraction-referenced nk database for InP and related materials
Friday 22nd April 2016
Former Qualcomm executive to drive company's go-to-market activities
Thursday 21st April 2016
New LED platform delivers lighting experience, optimised for each application
Thursday 21st April 2016
Eliminates need for external light source for mid-infrared silicon photonic devices or photonic circuits
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Thursday 21st April 2016
Guide simplifies product selection power conversion systems
Thursday 21st April 2016
Swedish start-up confirms successful alignment and orientation of GaAs nanowires in a thin film
Thursday 21st April 2016
As Cobham joins forces with RFHIC to drive GaN radar forward, Compound Semiconductor learns this is only the beginning.
Thursday 21st April 2016
Future terabit super-channels made possible through 500 Gb/s photonic integrated circuits
Thursday 21st April 2016
Power-over-Ethernet lighting deployed across 40,000-square-feet in Digital Ceiling solution
Wednesday 20th April 2016
Portfolio extends from 1.8 to 3.8 GHz to support LTE and LTE-A wireless-infrastructure market
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Wednesday 20th April 2016
New schottky barrier diodes and half bridge module target high-speed switching and high power performance
Wednesday 20th April 2016
US firms Skyworks, Qorvo and Avago dominate the market
Tuesday 19th April 2016
New streetlights extend better light from driveways to highways
Tuesday 19th April 2016
Company to provide MIRPHAB partners and customers with volume source of mid infrared laser epitaxial wafers
Tuesday 19th April 2016
HD format detector gains traction amongst new and existing customers
Tuesday 19th April 2016
Increasing demand for InSb and GaSb substrate materials
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Tuesday 19th April 2016
Use has been boosted by falling prices in 2015, especially for 4-inch wafers, says IHS 
Monday 18th April 2016
Adds ultra-low power, short range wireless offerings to RF portfolio
Monday 18th April 2016
ORNL scientists grow high-quality layers of GaSe and MoSe2
Monday 18th April 2016
AIX G5+ C integrates Imec's proprietary materials technology to increase performance of GaN-on-Si-based power devices
Monday 18th April 2016
French-American start-up plans to 'obsolete expensive GaAs power amplifiers used in today's mobile phones'
Monday 18th April 2016
Solmates to join 'Beyond CMOS' program to look at novel nanoelectronics device concepts

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