RASIRC Renews Atomic Layer Deposition funding at UCSD
RASIRC, a specialist in products that generate and deliver gas to fabrication processes, has renewed its funding agreement with the University of California, San Diego (UCSD) for on-going semiconductor processing research.
The gift donation supports one student for one year. RASIRC made a similar gift donation last year.
"Our ongoing research focuses on solving difficult materials problems associated with emerging semiconductor technology," said Andrew Kummel, a distinguished professor in the department of chemistry and biochemistry at UCSD, who represents UCSD in this agreement. "Financial and technical support from RASIRC aids our efforts to create new films and passivation layers for continuous shrinkage of semiconductor devices."
The UCSD team research covers passivation of SiGe channel materials and development of new low temperature deposition methods for metal nitrides.
Current projects ongoing in Kummel's group include: in-situ cleaning and functionalisation of SiGe, Ge, and InGaAs semiconductors for defect-free interfaces on FinFET sidewalls and contacts; selective etching and ALD on semiconductors and insulators; non-covalent functionalisation of 2D semiconductors; and nano-scale synthesis of silica nanoshells for tumor ultrasound imaging and ablation.
As part of the agreement, RASIRC provides BRUTE Peroxide and BRUTE Hydrazine materials for experimentation. BRUTE Peroxide delivers anhydrous H2O2 gas. BRUTE Hydrazine delivers water-free hydrazine (N2H4) gas into atomic layer deposition (ALD) processes.
"Universities play a critical role in chemical and materials research behind advances in the semiconductor industry as shown by the results produced and published by UCSD over the past year," said Daniel Alvarez, RASIR chief technology officer. "UCSD is a great partner and we look forward to working with the team to perfect novel new chemistries that solve very difficult problems where traditional methods do not work."