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Wolfspeed completes wide bandwidth C-band radar line-up

Latest addition is a 70W GaN GaN HEMT operating between 4.5 and 5.9GHz

Wolfspeed, a supplier of  MMICs and GaN-on-SiC HEMTs, has announced its complete line-up of high efficiency, high gain, and wide bandwidth C-Band radar parts with the introduction of the CGHV59070 GaN HEMT.

Designed to operate at 4.5 to 5.9GHz from a 50V rail, the new 70W GaN HEMT is designed as a driver for the highest power C-Band radar device on the market: Wolfspeed's 350W CGHV59350 GaN HEMT for 5.2 to 5.9 GHz operation, which was released in May of last year.

Delivering 90W typical POUT at 50V, in addition to 55 percent drain efficiency at high 14dB power gain, the internally matched CGHV59070 offers a general purpose broadband solution for a variety of RF and microwave applications, and is especially ideal for use in linear and compressed amplifier circuits in marine radar, weather monitoring, air and maritime vessel traffic control, and port security applications.

"First demonstrated at this year's International Microwave Symposium, the market release of the new 70W CGHV59070 pre-driver completes Wolfspeed's C-Band radar lineup of pre-drivers, drivers, and output stages, enabling 1kW, all-GaN SSPAs for C-Band radar applications," said Jim Milligan, RF and microwave director, Wolfspeed.

"This latest introduction also further extends our comprehensive radar product portfolio, which helps designers achieve smaller, lighter, and higher power RF amplifiers that are critical for the development of the next-gen military, aerospace, and commercial radar applications." 

Wolfspeed's CGHV59070 can be supplied in a ceramic/metal flange or pill package, and can be shipped individually, or alongside or installed on a test board. It will be on show at European Microwave Week 2016, held in at the Excel Centre in London, October 3 "“ 7.

Compared to conventional silicon and GaAs devices, Wolfspeed's GaN-on-SiC RF devices are said to deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving higher performing microwave and RF products needed for emerging systems across a variety of applications.

Wolfspeed says that in addition to C-Band radar power amplifiers, these GaN-on-SiC RF devices are also suitable for next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.

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