Wolfspeed to sponsor and present at ECSCRM 2016
Wolfspeed, a developer of SiC power and GaN-on-SiC RF devices, is sponsoring, exhibiting, and presenting at the 2016 European Conference on SiC and Related Materials (ECSCRM).
A biannual scientific forum that invites international specialists to explore the latest achievements in the field of wide bandgap semiconductors, and especially SiC, ECSCRM 2016 will take place September 25 - 29 in Halkidiki, Greece.
Scientists and engineers from Wolfspeed will display, demonstrate, and discuss their SiC materials and technologies, according to the company.
"As the industry's leading SiC materials and device manufacturer, we're proud to be a part of an innovative conference like ECSCRM," said Cengiz Balkas, chief operating officer, Wolfspeed. "We look forward to the opportunity to work with other industry experts to further advance the field."
Wolfspeed also will participate in technical conference events at ECSCRM 2016.
On Monday, chief technology officer John Palmour and CEO Cengiz Balkas will participate in industrial session panel discussions to facilitate the exchange of ideas concerning recent scientific and technical developments between participating companies and attendees.
Senior research scientist Sei-Hyung Ryu will deliver a presentation entitled "˜Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15kV 4H-SiC P-GTO Thyristor', and research scientist Daniel Lichtenwalner will deliver "˜Interface Structure and Properties of SiC MOSFETs with Alkaline Earth Interface Passivation'.
During the poster sessions, research scientist Jon Zhang will present "˜Next Generation 1700V, 20mΩ 4H-SiC DMOSFETs with Low Specific On-resistance and High Switching Speed', and research scientist Robert Leonard will present "˜Exploration of Bulk and Epitaxy Defects in 4H SiC Using Large Scale Optical Characterisation.'
