VisIC to show 1200V GaN family at ECCE2016
VisIC Technologies will be displaying a new family of 1200V GaN devices with integral ISO-driver at the IEEE Energy Conversion Congress and Exposition (ECCE2016) being held in Milwaukie from September 18th to 22nd 2016.
Designed for use as power converters for motor drives, three phase power supplies and other applications requiring current switching up to 50A, the new 1200V devices are high-voltage supplements to VisIC's existing ALL Switch line-up of 650V GaN devices.
Typical on resistance (RDS(ON)) ratings are down to 0.04Ω, according to the company.
"These low loss GaN devices are setting new industry standards for performance and are based on the VisIC ALL Switch second generation HEMT technology, which combines high levels of cell integration with optimised cell design," said Gregory Bunin, CTO, VisIC. "This technology supports reduced gate charge and capacitances without losing the benefits of low RDS(ON), with our GaNs offering an ultra-low maximum switching energy down to 140 µJ."
Switching losses are said to be three to five times lower compared to SIC MOSFETs counterparts.
