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Wolfspeed To Release Highest Power L-Band Radar GaN HEMT

CGHV14800 delivers a minimum of 800W of pulsed power at 1.2 to 1.4 GHz and 50V operation

Wolfspeed will launch what it believes is the highest output power 50V GaN HEMT for L-Band radar applications at European Microwave Week 2016 in London, October 3 - 7.

Delivering a minimum of 800W of pulsed power at 1.2 to 1.4 GHz and 50V operation with better than 65 percent drain efficiency, the CGHV14800 GaN HEMT features high efficiency, high gain, and wide bandwidth capabilities, which makes it suitable for L-Band radar amplifier applications, including: air traffic control (ATC) radar, penetration radar, antimissile system radar, target-tracking radar, and long-range surveillance radar.

Internally matched on input and output, the 900W, 50V GaN HEMT also exhibits 14dB power gain and <0.3dB pulsed amplitude droop. Wolfspeed's CGHV14800 is supplied in a ceramic/metal flange package that can be shipped individually, or alongside or installed on a test board.

"We demonstrated the CGHV14800 at this year's International Microwave Symposium, where it received a great deal of interest, so we are very excited to release the highest output power GaN transistor for L-Band radar available on the market during our exhibition at European Microwave Week," said Jim Milligan, RF and microwave director, Wolfspeed.

Wolfspeed says that compared to conventional silicon and GaAs devices, its GaN-on-SiC RF devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products.



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