Raytheon To Retrofit GaN Modules To AN/TPY-2 Radars
US Missile Defense Agency contract aims to modernise radar systems and drive down system obsolescence.
The US Missile Defense Agency has awarded Raytheon a contract modification to develop a transition to production process to incorporate GaN components into existing and future AN/TPY-2 radars.
This initial effort will support the transition from GaAs to GaN technology, which would further modernise the ballistic missile defence radar and drive down system obsolescence.
As demonstrated in other Raytheon-developed military radar applications, GaN has the capability to enhance range, increase detection and discrimination performance and lower production costs.
Currently fielded AN/TPY-2 radars use GaAs based transmit/receive modules to emit high power radiation. Raytheon and MDA are pursuing a retrofit approach to use GaN elements.
"GaN components have significant, proven advantages when compared to the previous generation GaAs technology," said Raytheon's Dave Gulla, vice president of the integrated defence systems mission systems and sensors business area. "Through this effort, Raytheon will develop a clear modernisation upgrade path for the AN/TPY-2 radar, enabling the system to better defend people and critical assets against ballistic missile threats at home and abroad."
According to recent Congressional testimony by the director of the US Missile Defense Agency, the threat is growing as potential adversaries acquire a greater number of ballistic missiles, increase their range, incorporate countermeasures and make them more complex, survivable, reliable and accurate.
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Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.
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