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Qorvo Launches GaN PAs For Advanced Radars

L-Band and S-Band PAs improve performance while reducing system costs

US RF company Qorvo has introduced two new power amplifiers (PAs) including the industry's first 500W, L-Band PA internally matched to 50 ohms. These high-power devices are optimised for use in defence and civilian radar systems, with features designed to shorten and simplify system implementation, according to the company.

Built on Qorvo's GaN technology, the new QPD1003 meets the performance needs of high-power phased arrays such as Active Electronic Scanned Array (AESA) radars, which operate in the 1.2 to 1.4 GHz frequency range. These systems require PAs that operate at maximum efficiency resulting in low heat generation in demanding environmental conditions. The new QPD1003 addresses these requirements through the use of GaN on SiC technology.

Roger Hall, general manager of high performance solutions at Qorvo said: "This is the first and only compact, internally matched and high-powered L-Band PA for AESA radar. It's a breakthrough technology that will provide substantial cost benefits and performance enhancements for customers."

In addition to the QPD1003 L-Band PA, Qorvo also introduced a 450W S-Band PA, designed for 3.1 to 3.5 GHz S-Band radar systems. 

Both devices offer advantages in size and ease of implementation over conventional GaN transistors. They enable multiple frequency bands to be covered by a single matched design, which reduces circuit footprint and overall complexity when used in multi-kilowatt arrays. Additionally, reducing the amount of power dissipation results in further system operational savings by reducing the need to cool the system.



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