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CNR-IMM Italy Uses Sentech Tool For High-k Material Research

Joint development agreement is exploring dielectrics and passivating layers on GaN and other wide band gap semiconductors.

The Institute for Microelectronics and Microsystems (CNR-IMM) in Catania, Italy is using a Sentech Instruments' plasma enhanced atomic layer deposition (PEALD) tool to investigate the integration of novel high-k gate dielectrics and passivating layers on devices based on GaN and other wide band gap semiconductors.

This is part of a joint development agreement between IMM and Sentech focused on developing and characterising laminated layers.

The use of alternative high-k materials helps shrink devices while keeping capacitance values constant and reducing leakage current density. Growing Al2O3-HfO2 laminated layers is among the most often used combinations for such applications.

"The Sentech SI PEALD LL reactor is a high performance and flexible system, allowing the production of several high quality dielectric thin films, whose physical properties can be tailored upon changing their chemical composition", says Raffaella Lo Nigro who is the scientist in charge of the PEALD tool and the collaboration with Sentech.

Lo Nigro has wide ranging expertise in the synthesis of binary and complex thin films by chemical vapour deposition methods for several microelectronic applications. "Possible applications of this activity" - continues Lo Nigro - "are related not only to the integration of novel gate dielectrics and passivating layers on wide band gap semiconductors, but also for RF devices based on graphene".



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