Monolith announces 1200V SiC Diode Samples
Monolith Semiconductor, a start-up based in Texas, has announced the availability of engineering samples of 1200V, 5A and 10A SiC Schottky diodes in TO-220 packaging.
Manufactured at X-Fab Texas' 150mm SiC foundry, the diodes are said to feature zero reverse recovery current, superior avalanche ruggedness, high surge current capability and low leakage currents at high temperatures.
"The superior switching performance of these diodes will reduce losses by over 50 percent compared to silicon diodes resulting in higher energy efficiency in power electronic applications such as solar inverters, motor drives and power supplies," commented Kiran Chatty, VP of product development.
"While the benefits of SiC devices in improving the efficiency and reducing the size, weight and volume of power electronic systems is well known, the adoption has been slow due to the high cost of these devices. Manufacturing these SiC diodes in a high volume silicon manufacturing facility will enable us to provide cost effective, high performance and high reliability SiC devices to our customers," said Sujit Banerjee, CEO of Monolith Semiconductor.
The collaboration with the US Department of Energy and Power America has been key in achieving this milestone, according to the company.
