Transphorm GaN FETs Available from Digi-Key
High power full packaged GaN FETs for immediate shipment through new global distribution agreement
Transphorm's GaN FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from distributor Digi-Key Electronics, as part of a new global distribution agreement.
Transphorm develops JEDEC-qualified GaN FETs for high-voltage power conversion applications. The company's product portfolio includes 600V and 650V discretes for power levels up to 4.5kW.
"The Transphorm team uniquely delivers a vertically-integrated approach to GaN development, said Mike White, senior VP, sales and marketing at Transphorm.
"Our expertise applies to each layer of production-from the epitaxy tech through to the application development support. We're deeply invested in the end-to-end process so that we can deliver the highest quality, highest reliability GaN technology available and, ultimately, help GaN achieve its promise as the new solution to power density challenges."
Transphorm pairs its depletion-mode, high-voltage GaN FET with a standard, low-voltage silicon MOSFET, creating a hybrid device known as a cascode switch. These devices operate as normally-off and are compatible with off-the-shelf Si drivers for ease of use. GaN provides higher performance, higher power density, and overall lower system cost.
"We're excited to partner with Transphorm and offer their high-performance and reliable GaN devices to our global customers," said David Stein, VP, Global Semiconductor at Digi-Key. "Their fully-packaged GaN FETs allow engineers and designers that develop power switching applications to take advantage of the benefits of these products."
