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Infineon to exhibit 3G semiconductor technology at Mobile World Congress

Compound semiconductors at the heart of energy efficient 5G communication

Infineon will be showing a range of semiconductor technologies for energy efficient 5G communication at Mobile World Congress (MWC 2017) from February 27 "“ March 2 in Barcelona, Spain.

These include high efficiency RF power technologies including GaN-on-SiC and GaN-on-Si for integrated architectures above 6 GHz and LDMOS for price competitive and high ruggedness sub 6 GHz systems.

It will also show flexible RF solutions for mobile and low power infrastructure including SiGe, BiCMOS, GaN mmW technologies and RF CMOS.

For mmW solutions using frequencies as high as 100 GHz, Infineon is building on its expertise in mmW transceivers for radar applications using beamforming. The company says it is paving the way in phase-shift technology for highest spatial beam accuracy, enabling massive MIMO and multiple arrays based systems.

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