Mitsubishi Launches SiC Schottky-barrier Diode
Reduces power loss and physical size of power supply systems
Mitsubishi Electric has launched a SiC Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure.
The new device is designed to reduce the power loss and physical size of power supply systems for air conditioners, photovoltaic power systems and more.
The energy conversion performance of SiC results in about 21 percent less power loss compared to silicon products, according to the company. It also enables high-speed switching and downsizing of peripheral components, such as reactors.
The junction barrier diode structure, which includes a Schottky barrier with p-n junction, improves reliability.