+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

Mitsubishi Launches SiC Schottky-barrier Diode

Reduces power loss and physical size of power supply systems


Mitsubishi Electric has launched a SiC Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure. 

The new device is designed to reduce the power loss and physical size of power supply systems for air conditioners, photovoltaic power systems and more.

The energy conversion performance of SiC results in about 21 percent less power loss compared to silicon products, according to the company. It also enables high-speed switching and downsizing of peripheral components, such as reactors.

The junction barrier diode structure, which includes a Schottky barrier with p-n junction, improves reliability. 

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: