EPC Introduces 200V GaN Power Transistor
Device is 12 times smaller than equivalently rated MOSFETSÂ
EPC has announced the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives.
The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current. The chip-scale packaging of the EPC2046 is said to handle thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. It measures 0.95 mm x 2.76 mm.
"Manufactured using our latest fifth-generation process, the EPC2046 demonstrates how EPC and GaN transistor technology is increasing the performance and reducing the cost of eGaN devices," said Alex Lidow, EPC's co-founder and CEO.
"This opens up entirely new applications beyond the reach of the aging silicon MOSFET and offers a big incentive for users of MOSFETs in existing applications to switch. This latest product is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen," he added.
The EPC9079 development board is a 200 V maximum device voltage, half bridge with onboard gate driver, featuring the EPC2046, onboard gate drive supply and bypass capacitors. This 2inch x 1.5inch board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the EPC2046 eGaN FET.The EPC2046 eGaN FETs are priced for 1K units at $3.51 each.
