Loading...
News Article

JEDEC to Set Standards for Wide Bandgap Semiconductors

News

JC-70 Wide Bandgap Power Electronic Conversion Semiconductors committee will focus on GaN and SiC device reliability, qualification, characterisation and testing methods

JEDEC Solid State Technology Association, thel standards development organisation, has formed a new JEDEC committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors.

Led by interim chairs from Infineon, Texas Instruments, and Wolfspeed, a Cree Company, the new JC-70 committee will initially have two subcommittees: GaN and SiC and focus on Reliability and Qualification Procedures; Datasheet Elements and Parameters; and Test and Characterisation Methods.

JC-70's first committee meeting will be co-located with the 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), on October 30, 2017 in Albuquerque, NM. JEDEC meetings are open to committee members and invited guests only, and interested companies worldwide are welcome to join JEDEC to participate in this important standardization effort.

"The formation of the JC-70 committee is part of an ongoing effort within JEDEC to extend our standards setting expertise to new technologies to meet market demands. We welcome all interested companies to participate in the development of open industry standards within JEDEC."

SiC and GaN are the most mature wide bandgap (WBG) power semiconductor materials and offer immense potential for enabling higher performance, more compact, and energy efficient power systems. "WBG GaN and SiC technologies are poised to benefit from the development of standards focused on quality and reliability, datasheets, and test methods," said Tim McDonald, senior director, GaN applications and marketing at Infineon Technologies.

During an industry conference in the spring of 2016, a working group of industry experts was formed. Designated as GaNSPEC DWG, it began laying the necessary groundwork for the development of standards for GaN. JEDEC began providing logistical support to the group shortly thereafter.

"To meet the demand of today's energy and product requirements, this team is helping to create the mature industry infrastructure that customers need to design power supplies," said Stephanie Watts Butler, technology innovation architect at Texas Instruments. "The broad academic and industry participation is indicative of the importance of wide bandgap for complying with these requirements."

GaNSPEC DWG was soon joined by a counterpart: the SiCSPEC working group. The two groups grew to almost 50 device manufacturers, equipment manufacturers, technology creators, academic representatives, and government labs from the US, Europe, and Asia. "Our consensus is that JEDEC is the logical home for the continuation of these efforts in a public forum, and the team is delighted to invite industry participation in this new JEDEC committee," said Jeff Casady, business development & programs manager from Wolfspeed, a Cree Company. "Creating clear, universal standards is a key step in advancing the adoption of wide bandgap technologies. These new parameters will enable users to design SiC and GaN devices into the systems of tomorrow, thus creating a more energy efficient future."

John Kelly, JEDEC President, added, "The formation of the JC-70 committee is part of an ongoing effort within JEDEC to extend our standards setting expertise to new technologies to meet market demands. We welcome all interested companies to participate in the development of open industry standards within JEDEC."

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: