Loading...
News Article

Servo Motor uses Transphorm GaN technology

News

Yaskawa's Σ-7 F uses Transphorm's high-voltage GaN FETs to deliver better performance in a smaller form factor

Yaskawa Electric, a Japanese motion control firm focused on mechatronic solutions, has announced that its Yaskawa's Σ-7 F servo motor uses Transphorm's high-voltage (HV) GaN technology to deliver better performance in a smaller form factor.

This co-developed device integrates the servo amplifier with the servo motor itself. Further, Yaskawa's use of Transphorm's GaN FETs produces an integrated servo motor half the size of a similar design using silicon technology.

The Σ-7 F series - AC servo motors in a three-phase bridge configuration - uses Transphorm's HV GaN FETs in a standard three lead TO-220 package. The topology will be deployed across Yaskawa's full Σ-7 F product line, which currently includes three servo motors ranging from 100W to 400W. The integrated motor allows the industrial manufacturing system to simplify cabling in a daisy chain configuration. Further, it reduces the system's control panel cabinet size by as much as 30 percent, due to the reduction in size of the servo motor itself; elimination of the power supply cable's terminal block due to a reduction in cabling required; and smaller heat sink due to lower losses using Transphorm GaN.

Transphorm's HV GaN technology delivers better efficiency via lower gate charge, faster switching speeds and smaller reverse recovery charge when compared to incumbent technologies, while offering high reliability. Additionally, applications designed on Transphorm GaN achieve smaller device size, higher power density and lower overall system costs.

"The Σ-7 F servo motor is our second Transphorm GaN product and our second time leading an industry into the future with revolutionary power solutions," said Kazuhiro Imanaga, general manager, Servo Drives Technology Department, Motion Control Division, Yaskawa Electric. "When delivered by trusted suppliers, GaN has the potential to radically change what's possible in industrial automation systems. Yaskawa has the vision capable of driving that change. Our belief in the Q+R of Transphorm's GaN along with our positive partnership experience with the company's engineers enables us to fulfill that vision."

The Σ-7 F resulted from a strong multi-year partnership between Yaskawa and Transphorm. Yaskawa's Research and Development team as well as its Quality and Production team worked closely with members of Transphorm's GaN Development, Applications, Quality and Manufacturing teams. Additionally, Yaskawa tapped into Transphorm's design resources and tools throughout the development process, which are available to customers through Transphorm's Silicon Valley Center of Excellence.

Say hello to the heterogeneous revolution
Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
x
Adblocker Detected
Please consider unblocking adverts on this website