Sumitomo Launches SiC Epi Wafer
High quality EpiEra wafer attains more than 99 percent defect free area
Sumitomo Electric has started mass production of a high quality SiC-based epitaxial wafer product that was shown at the recent International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017 held in Washington DC, USA.
The EpiEra wafer is said to offer an industry-leading 99 percent defect-free area (DFA), eliminating surface defects and Basal Plane Dislocations (BPD) to improve quality stability and reliability.
One of the keys to the low defect density is the company's multi-parameter and zone (MPZ) control technology. MPZ adjusts various parameters depending on the area and time zone using simulation and monitoring techniques. Parameters include temperature, pressure, and gas reactions.