EPC Introduces tiny 40V GaN Power transistor
Transistor is eight times smaller than equivalently rated MOSFETs
EPC has announced the 40V EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. It measures 2.5 mm x 1.5 mm (3.75 mm2), which is said to be eight times smaller than equivalently rated MOSFETs.
The EPC2049 has q maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.
The chip-scale packaging of device is said to handle thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package.
"The EPC2049 demonstrates how EPC and GaN transistor technology is increasing the performance and reducing the cost of eGaN devices. The EPC2049 is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen." said Alex Lidow, EPC's co-founder and CEO.
The EPC2049 eGaN FET is priced for 1K units at $2.19 each and is available from Digi-Key
