Mitsubishi And NanoSemito Demo Wideband GaN Amp
Ultra wide-band linearised Doherty amplifier for next generation LTE to be exhibited at Radio Wireless Week in Anaheim
Mitsubishi Electric US will present a hands-on mini lab showcasing its high-efficiency, wide-band GaN Doherty Amplifier at Radio Wireless Week (RWW2018), which will be held January 15-16 at the Hyatt Regency Orange County, Garden Grove, California.
The demonstration at RWW2018 will further illustrate the ability to linearise an ultra-wideband signal applied to Mitsubishi Electric’s GaN power amplifier using an advanced pre-distortion technique provided by NanoSemi.
“The proliferation of smartphones and tablets will require a dramatic increase in wireless capacity of base stations. To meet this demand, mobile technologies are moving to next generation LTE in which the wireless capacities are increased by allocating multiple simultaneous frequency bands (carrier aggregation) above 3GHz," said Kyle Martin, VP and general manager, Mitsubishi Electric US, Semiconductor Division.
“Operating in multiple simultaneous frequency bands usually requires multiple power amplifiers to cover each frequency band, leading to an increase in the size of base stations."
Conventional base station Doherty power amplifier design presents many challenges to simultaneously achieve both high efficiency and low distortion for wide-band carrier aggregation. Using NanoSemi’s digital pre-distortion (DPD) technology, Mitsubishi Electric’s wide-band Doherty power amplifier can achieve high efficiencies with up to 200MHz instantaneous bandwidth while maintaining ACLR of -50dBc.
With this breakthrough, base station designers gain the ability to design a single flexible LTE power amplifier capable of many carrier aggregation scenarios, even above 3GHz, according to Mitsubishi.