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ON Semiconductor Orders Veeco GaN Tool

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After successful beta testing, ON selects Propel HVM single-wafer cluster platform for production ramp of power devices

Veeco Instruments has announced that ON Semiconductor has ordered its Propel High-volume Manufacturing (HVM) GaN MOCVD system, based on successful beta evaluation of the tool. As the industry’s first single-wafer cluster platform, the Propel GaN MOCVD system is designed for high-voltage power-management devices used in data centres; automotive, information and communication technology; defence; aerospace and power distribution systems, among other applications.

“Our prior learning with Veeco’s K465i GaN MOCVD system drove us to investigate the Propel HVM platform for our production ramp," said Marnix Tack, senior director of corporate R&D and Open Innovation at ON Semiconductor. “The beta test results demonstrated superior device performance with high uniformity and within-wafer and wafer-to-wafer repeatability, while meeting our cost-of-ownership targets for six- and eight-inch wafers. As such, the Propel HVM system proved to be the most suitable platform for our power electronics manufacturing needs."

Veeco's Propel HVM System is based on the company's single-wafer system with proprietary IsoFlange and SymmHeat technologies that provide homogeneous laminar flow and uniform temperature profile across the entire wafer. The system is designed for the production of power electronics, laser diodes, RF devices and advanced LEDs.

“The Propel HVM platform is rapidly gaining traction in the industry as innovative companies like ON Semiconductor recognise the benefits of GaN-on-silicon, which will partially replace current silicon technology for power electronics," commented Peo Hansson, senior vice president and general manager of Veeco MOCVD operations.

“With its highly controlled doping, run-to-run stability, superior wafer uniformity, high productivity and uptime, Propel HVM extends the benefits of our TurboDisc platform to a unique single-wafer architecture. These capabilities benefit customers that seek a superior solution for manufacturing while providing a path for scaling to eight-inch wafers and expansion to RF and other advanced applications."

According to market research firm Yole Développement, the GaN power device business was worth $14 million in 2016, and projects that it will reach $460 million by 2022, with a compound annual growth rate (CAGR) of 79 percent. GaN-based devices will be used increasingly in RF amplifiers, LEDs and high voltage applications among others, primarily due to their abilities to operate at high frequency, power density and temperature with improved efficiency and linearity.

Veeco is discussing the power of its MOCVD and wet etch systems in the '5G: Where Are We and What’s Next?' track at the CS International Conference this week in Brussels, Belgium.

Somit Joshi, senior director of MOCVD marketing is presenting a session titled, 'Enabling GaN RF and Power Electronics through Innovative MOCVD and Wet Etch Process Technologies', on Wednesday, April 11, and the Veeco team will also be accepting the CS Industry 2018 Award for Innovation for its GENxcel R&D MBE System at the awards ceremony held during the conference.


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