Power Firm NexGen Orders Aixtron MOCVD Tool
Deposition company Aixtron will provide its high-end MOCVD tool, the AIX G5 HT planetary platform, to NexGen Power Systems for the continued development of GaN-based electronic devices for power conversion systems.
The equipment is scheduled for shipment in Q3/2018.
The AIX G5 HT MOCVD system is claimed to be the only tool on the market that embeds wafer level control, making it highly efficient for the epitaxy of GaN-on-GaN, GaN-on-Si and GaN-on-SiC used for power electronic and RF applications.
The fully-automated tool offers in-situ cleaning for best process robustness and defect control while it is also equipped with the latest Laytec InSide P400 UV Pyrometer for non-contact temperature measurement. Coupled with Aixtron's Auto Feed-Forward (AFF) individual on-wafer temperature control, this enables a matching of all epitaxial wafers - within a run as well as run-to-run.
Dinesh Ramanathan, CEO of NexGen Power Systems, says: "Our disruptive True GaN VJFET4 technology is able to outperform silicon, SiC or GaN-on-Silicon technology by providing higher breakdown voltage, lower on-resistance and higher switching frequency.
"NexGen's True GaN power devices enable the design of compact power conversion systems while increasing their efficiency with applications in data centre power supplies, motor drivers, solar inverters and electric car drive-trains. Aixtron's planetary technology in combination with its batch reactor concept will provide us both the performance control we need as well as the cost effectiveness to ensure a rapid adoption of our groundbreaking power devices."
"We are looking forward to support NexGen's efforts to revolutionise existing power conversion systems. In recent years, our AIX G5 HT planetary tools have built a solid reputation as precise, reliable and cost-efficient manufacturing equipment in the semiconductor industry "“ unlocking a more rapid adoption of GaN devices against their silicon equivalents", comments Felix Grawert, president of Aixtron SE.