Infineon shows GaN HEMTs and drivers at Electronica
At electronica 2018 Infineon Technologies AG will show the benefits of its CoolGaN 600 V e-mode HEMTs and GaN EiceDRIVER ICs in offering higher power density, smaller and lighter designs.
With the introduction of its CoolGaN 600V enhancement mode (e-mode) HEMTs and GaN EiceDRIVER gate driver ICs, Infineon believes it is the only company in the market offering a full-spectrum portfolio of all power technologies "“ silicon (Si), SiC and GaN.
The newly launched CoolGaN 600 V e-mode HEMTs are built with a reliable normally-off concept, optimised for fast turn-on and turn-off. They enable high efficiency and density levels in switched mode power supplies (SMPS) showing the best figures of merit (FOMs) of all currently available 600 V devices.
Infineon's CoolGaN 600 V e-mode HEMTs enable highest power factor correction (PFC) efficiency (>99.3 percent for 2.5 kW PFC) and significantly higher density for the same efficiency (>160 W/in 3 for 3.6 kW LLC with >98 percent efficiency). The linear output capacitance leads to 8-10 times lower dead time in resonant topologies.
The CoolGaN 600 V switches are available with 70 mΩ and 190 mΩ in SMD packages, guaranteeing excellent thermal performance and low parasitics. By offering a full SMD package series, Infineon aims to support high frequency operations in applications such as enterprise and hyperscale data center servers, telecom rectifiers, adapters, chargers, SMPS and wireless charging.
Infineon's new EiceDRIVERICs - the 1EDF5673K, 1EDF5673F and 1EDS5663H designed for CoolGaN e-mode HEMTs. Unlike gate driver ICs for power MOSFETs, the Infineon tailor-made gate driver ICs provide a negative output voltage to rapidly turn off GaN switches. For the entire duration the switch is intended to be off, the GaN EiceDRIVER ICs can firmly hold the gate voltage at zero. This protects the GaN switch against spurious turn-on, even for the first pulse, which is essential for robust SMPS operations.
The GaN gate driver ICs allow constant GaN HEMT switching slew rates, virtually independent from duty cycle or switching frequency. This ensures operational robustness and high power efficiency, and greatly reduces R&D time. Galvanic isolation is integrated for operational robustness in hard switching applications. It also provides protection between the primary and secondary side of an SMPS and between power and logic stages where needed.