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Transphorm selects Veeco Platform for GaN-Based Devices


Propel HVM MOCVD system purchased under US DoD Office of Naval Research (ONR) contract

Veeco has announced that Transphorm, a supplier of GaN chips products for high voltage power conversion applications, has selected Veeco’s Propel HVM MOCVD System for high-volume production of GaN-based RF (DoD and Commercial/5G) and power electronics epiwafers.

The Veeco system was purchased under a US DoD Office of Naval Research (ONR) contract N68335-19-C-0107 from an OUSD (R&E) TAM/MINSEC program to establish a US based dedicated production source of GaN Epitaxy for high performance RF and mmwave electronics. T

“Being at the forefront of GaN-based power and 5G devices that offer efficiency and high-power density, requires world-class manufacturing solutions that are capable of scaling to mass production while offering flexibility to continuously innovate,” said Umesh Mishra, chief technology officer and co-founder of Transphorm. “Veeco’s Propel HVM system is uniquely qualified to do that. The multi-reactor, single-wafer technology provides flexibility and exceptional throughput at a low cost of ownership.”

The Propel system's single-wafer reactor platform enables the processing of six- and eight-inch wafers or two- to four-inch wafers in a mini-batch mode. It is said to accelerate production ramping due to faster recipe capabilities up to 50 percent quicker than when using traditional batch tools. In addition to Veeco’s proprietary TurboDisc technology, the system also includes Veeco’s IsoFlange and SymmHeat technologies, which are designed to provide homogeneous laminar flow and uniform temperature profile across the entire wafer.

“We are proud to have our MOCVD technology selected by a pioneer and recognised world leader in the GaN revolution,” commented Ajit Paranjpe, Veeco’s CEO. “Transphorm’s decision to adopt our high-volume MOCVD technology is proof of the system’s uniformity, throughput, repeatability and cost of ownership advantages over batch technology.”

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