Macom and US Air Force to work together on process technology
Cooperative R&D agreement plans to transfer AFRL’s 0.14 micron GaN-on-SiC process to Macom’s Massachusetts-based foundry
US-based semiconductor firm Macom Technology has entered into a cooperative R&D sgreement with the United States Air Force Research Laboratory (AFRL) for GaN-on-SiC technology.
Under the agreement, AFRL and Macom will work together to transfer AFRL’s production ready 0.14 micron GaN-on-SiC semiconductor process to Macom’s Massachusetts-based US Trusted Foundry. Semiconductor experts from both parties will collaborate to support a rapid process transfer to Macom.
The AFRL GaN-on-SiC process is suitable for monolithic microwave integrated circuit (MMIC) products and is capable of achieving industry leading frequency and power density performance. Once the process is transferred, Macom anticipates that it will expand its standard and custom MMIC product offerings.
"This semiconductor process will enable us to enter the microwave and millimeter wave GaN MMIC market with high-performance products," said Stephen G. Daly, Macom s president and CEO. "Our wafer fabrication facility is already well equipped to support GaN, including installed electron beam lithography capability, so we can bring the process online with minimal capital investment. We intend to service a wide range of commercial and US defence opportunities, including satellite communication systems, as well as land-, air- and sea-based radar systems."
"We look forward to Macom supporting critical US Air Force and Department of Defense requirements with an industrialised and best in class GaN semiconductor process," said Robert Fitch of AFRL Sensors Directorate. "Expanding domestic advanced semiconductor manufacturing is a national priority."