News Article

Beneq ALD Enables Next-Generations Of Power Devices


Driven by fast-growing demand in electric vehicles, consumer electronics and renewable electricity modern power devices are evolving rapidly in terms of materials as well as design and process technologies. For example, Wide Bandgap SiC and GaN devices have the fundamental advantage of low on-resistance x high breakdown voltage. Increasingly advanced deposition technologies are required across the board. The most critical are the dielectrics to be grown or deposited at the surface of the semiconductor, either as part of the active MOS or MIS structure or as a surface passivation layer.

ALD holds unique advantages over other deposition methods such as PECVD

- Unrivalled conformality, sub-nanometer thickness control and uniformity

- Broad range of materials, including Al2O3, AlN, HfO2, Ta2O5, SiO2, Si3N4, TiN, TiO2, ZnO, and metals etc.

- Greater electrical, morphological, optical, and mechanical tuneability

- High quality at low temperature - typically between 50-400 °C

Proprietary Beneq in-situ pre-clean and passivation is especially developed for metal and semiconductor surfaces - Silicon and compound semiconductor. In other words, ALD also differentiates by its capability to grow thin dielectrics of thermal quality at much lower temperature than thermal processes such as thermal oxidation. ALD enables low thermal budget process integration.

Not only SiC and GaN devices but also mainstream MOSFET's and IGBT benefit from the above merits enabled by advanced integrated ALD technology.

Thanks to rapid advances in ALD equipment technology, throughput can now be scaled by using batch process i.e. 25 wafer batch as much as needed. Thermal batch ALD enables production-worthy throughputs (double digit) for thicknesses in the range of 10 to 100 nm.

Beneq TransformTM cluster tool is a fully automated, in-vacuum cassette-to-cassette ALD manufacturing solution.

“The Beneq TransformTM mainframe is built on an industry-standard handling system, equipped with a four-sided - Beneq TransformTM Lite - or six-sided transfer module including one or two cassette load locks for production worthy reliable cassette-to-cassette full single wafer automation. The configuration is highly flexible and scalable and can be adapted to various R&D and manufacturing requirements for wafer sizes from 3'' up to 8'',” says Dr. Patrick Rabinzohn, Business Executive, Semiconductor ALD Business Line.