GeneSiC announces 3rd Gen 750V SiC MOSFETs
System benefits include low on-state drops at operating temperatures, faster switching speeds, and increased power density
GeneSiC Semiconductor has announced its next-generation 750V G3R SiC MOSFETs with system benefits including low on-state drops at operating temperatures, faster switching speeds, increased power density, minimal ringing (low EMI) and compact system size.
GeneSiC’s G3R, offered in optimised low-inductance discrete packages (SMD and through hole), are designed to operate with low power losses under all operating conditions and ultra-fast switching speeds.
“High-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry’s best performing 750V SiC MOSFETs," said Ranbir Singh, president at GeneSiC Semiconductor.
"Our G3R enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters, EV on-board chargers and server/telecom power supplies. An assured quality, supported by fast turn-around and automotive-qualified high volume manufacturing further enhances their value proposition," added Singh.
Applications include PV inverters, EV / HEV onboard chargers, server and telecom power supplies, UPS, DC-DC converters, induction heating, energy storage and battery charging.
All of GeneSiC Semiconductor’s SiC MOSFETs are suitable for automotive applications (AEC-Q101) and PPAP-capable.