Cambridge GaN to attend APEC 2024
Company to present on how ICeGaN can address the data centre challenges of AI
Cambridge GaN Devices (CGD) will be at the upcoming APEC 2024 (IEEE Applied Power Electronics Conference and Exposition), and will contribute a number of papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by data centres as the use of AI proliferates.
Giorgia Longobardi, CEO said:“With data centres now demanding 100kW per rack and predicting even more in the very near future, power system designers are looking to employ GaN devices in new architectures. At CGD we are addressing this challenge with new devices and reference designs which we will be discussing at APEC, along with many other applications where GaN can play a huge role in enabling sustainable electronics solutions that are more efficient, have high performance and are more compact.”
CGD will present three papers at APEC: Tuesday 27th February, 15.00-15.30 – ‘How ICeGaN technology can address the data centre challenges that digitalisation brings’, with Andrea Bricconi, CCO, CGD and Peter Di Maso, VP of Business Development (Americas) CGD; Wednesday 28th February, 09.10-09.30 – ‘Evaluation of GaN HEMT dv/dt Immunity and dv/dt induced false turn-on energy loss’, with Nirmana Perera, application engineer, CGD; and Thursday 29th February, 09:45 - 10:10: ‘Monolithic integration addresses the design challenges of GaN Power devices’, with Di Chen, director of Business Development & Technical Marketing, CGD.
On its booth, CGD will present a range of demos designed to show its 650 V GaN HEMT family. ICeGaN H2 single-chip eMode HEMTs can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components.
Addressing the increase in power required by server and industrial applications, CGD will show a 350 W PFC/LLC reference design using ICeGaN (650 V, 55 mΩ, H2 series). With a board power density of 23 W/in3, the bridgeless CrM Totem Pole PFC plus half-bridge LLC design has a peak efficiency of 95%, (93% average) and a no-load power consumption of 150 mW.
Andrea Bricconi, CCO, CGD said: “GaN is now accepted as a reliable and proven technology that is able to deliver high efficiency and power density simultaneously. data centres, with their insatiable need for power, are an obvious application for GaN, but there are many other consumer, industrial and automotive applications where GaN can also demonstrate the ability to be a disruptive technology. CGD has delivered industry’s most easy-to-use GaN technology – ICeGaN – and we are keen to share our ideas with the audience at APEC.”
