TI announces new power ranges
100V GaN power stages reduce solution size by over 40 percent and increase power efficiency with 50 percent lower switching losses
Texas Instruments has introduced two new power conversion device portfolios to help engineers achieve more power in smaller spaces.
TI's new 100V integrated GaN power stages feature thermally enhanced dual-side cooled package technology to simplify thermal designs and achieve high power density in mid-voltage applications at more than 1.5kW/in3. And the new 1.5W isolated DC/DC modules with integrated transformers are said to be the industry's smallest and most power-dense, helping engineers shrink the isolated bias power-supply size in automotive and industrial systems by over 89 percent.
Devices from both portfolios will be on display at this year's Applied Power Electronics Conference (APEC), Feb. 25-29 in Long Beach, California.
"For power-supply designers, delivering more power in limited spaces will always be a critical design challenge," said Kannan Soundarapandian, general manager of High Voltage Power at TI. "Take data centres, for example – if engineers can design power-dense server power-supply solutions, data centres can operate more efficiently to meet growing processing needs while also minimising their environmental footprint. We're excited to continue to push the limits of power management by offering innovations that help engineers deliver the highest power density, efficiency and thermal performance."
With TI's new 100V GaN power stages, LMG2100R044 and LMG3100R017, designers can reduce power-supply solution size for mid-voltage applications by more than 40 percent and achieve industry-leading power density of over 1.5kW/in3, enabled by GaN technology's higher switching frequencies. The new portfolio also reduces switching power losses by 50 percent compared to silicon-based solutions, while achieving 98 percent or higher system efficiency given the lower output capacitance and lower gate-drive losses. In a solar inverter system, for example, higher density and efficiency enables the same panel to store and produce more power while decreasing the size of the overall microinverter system.
A key enabler of the thermal performance in the 100V GaN portfolio is TI's thermally enhanced dual-side cooled package. This technology enables more efficient heat removal from both sides of the device and offers improved thermal resistance compared to competing integrated GaN devices.
Shrink bias power supplies by more than 89 percent
With over eight times higher power density than discrete solutions and three times higher power density than competing modules, TI's new 1.5W isolated DC/DC modules are said to deliver the highest output power and isolation capability (3kV) for automotive and industrial systems in a 4mm-by-5mm very thin small outline no-lead (VSON) package. With TI's UCC33420-Q1 and UCC33420, designers can also easily meet stringent electromagnetic interference (EMI) requirements, such as Comité International Spécial des Perturbations Radioélectriques (CISPR) 32 and 25, with fewer components and a simple filter design.
The new modules use TI's next-generation integrated transformer technology, which eliminates the need for an external transformer in a bias supply design. The technology allows engineers to shrink solution size by more than 89 percent and reduce height by up to 75 percent, while cutting bill of materials by half compared to discrete solutions.
According to TI, with the first automotive-qualified solution in this small package, designers can now reduce the footprint, weight and height of their bias supply solution for electric vehicle systems such as battery management systems. For space-constrained industrial power delivery in data centres, the new module enables designers to minimise printed circuit board area.
