Navitas announces US-made Gen 5 GaNFast chips
Navitas Semiconductor has announced that the first shipments of US-manufactured 5th Generation GaNFast technology, in partnership with GlobalFoundries (GF), will begin in September, marking a milestone in strengthening US domestic GaN ecosystem for AI infrastructure and critical national security applications.
The initial product family is expected to include 650V GaN FETs with RDS(ON) values of 11mΩ, 18mΩ, 50mΩ, 120mΩ, and 150mΩ, with first wafers scheduled to ship in September, internal samples in October, and strategic customer samples before the end of the year.
In November 2025, Navitas and GF announced a long-term strategic partnership to accelerate US GaN innovation and domestic manufacturing. Navitas developed its Gen 5 GaNFast FETs and power ICs for production at GF’s US based 200mm GaN-on-Si manufacturing facility in Burlington, Vermont.
"This milestone demonstrates the strength of American innovation and manufacturing," said Chris Allexandre, president and CEO of Navitas. “Together with GlobalFoundries, we have established a trusted US-domestic manufacturing source for our GaNFast Gen 5 and future generations, which will play a critical role in powering AI infrastructure and high-performance computing while strengthening the resilience of the US semiconductor ecosystem.”
“The first shipment from our US manufacturing line demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply,” said Kannan Soundarapandian, senior vice president of GF’s power business. “By combining Navitas’ power semiconductor leadership with GF’s manufacturing expertise, we are enabling the high-efficiency power solutions needed for AI infrastructure and other critical applications while strengthening the resilience of the US semiconductor ecosystem.”
