Conexant will supply GaAs HBT power amplifier modules to Samsung Electronics and Acer Communications & Multimedia (Acer CM) under separate agreements. The Samsung contract marks the shipment of Conexant s 100 millionth GaAs HBT power amplifier module. Acer CM selected Conexant s dual-band power amplifier module for use in next-generation digital cellular handsets, primarily for the Asian and European markets. Conexant s CX77301 PA module is based on the 50 GHz GaAs HBT process and suits 900 and 1800 MHz GSM operating bands. The module also supports general packet radio service (GPRS) operation (see ). Based in Taoyuan, Taiwan, Acer CM launched its own mobile-phone design in 1994. This product replaced desktop monitors as a major revenue stream for the company, which now also services the display, storage, imaging, wireless and broadband markets. "We re pleased to expand upon our relationship with Conexant and believe that their dual-band power amplifier module will allow us to deliver highly reliable, high-performance products to our customer base in a cost-effective and timely manner," said Irwin Chen, the vice-president and general manager of Acer s wireless communication business. Korean handset makers choose TriQuint TriQuint has received contracts from two Korean manufacturers to supply power amplifier modules for cellular handsets. Samsung Electro-Mechanics Co chose TriQuint s CDMA power amplifier MMICs for use in its CDMA/AMPS and AMPS modules, which are currently being designed into several models of phones for employment both in Korea and the rest of the world. Meanwhile LG Innotek has selected TriQuint s CDMA power amplifier for use in its LG series CDMA power amplifier module, which is also destined for Korean and worldwide handset markets. Based in Seoul, LG Innotek s interests include components for the telecom and electronic defense industries. "TriQuint is delighted that its power amplifier solutions have been chosen for these new power amplifier modules," said Rupert Prince, director of marketing at TriQuint. "The CDMA power amplifier has demonstrated a significant improvement in RF performance over the power amplifiers which are currently available on the market. We expect that leading-edge handset makers will rapidly adopt this module solution." Ericsson receives PAs from RF Micro RF Micro Devices has begun shipping power amplifiers to Ericsson, which the Swedish mobile-phone manufacturer will use in its T39 and R520 series handsets. These phones allow operation in most countries using the triple-band (900/1800/1900 MHz) GSM standard. Both handsets also feature Bluetooth wireless and general packet radio service (GPRS) technology, which enables high-speed Internet and other types of data communications. RFMD s MMIC PA is based on the company s high-efficiency GaAs HBT process. "We believe our experience and leadership in the design and manufacture of GaAs HBT power amplifiers together with our ability to support volume production contributed to Ericsson s decision," said Joe Grzyb, RFMD s director of power amplifier products. Celeritek seals deal with "a major US handset maker" Celeritek will supply InGaP HBT power amplifier modules to a major US handset manufacturer, believed to be Motorola, for use in developing prototype next-generation handsets capable of CDMA 1X. The modules, CSM2104C and CSM2105C, suit cellular and PCS CDMA and CDMA 1X applications. Celeritek expects production orders in the third quarter of fiscal 2002, and to ramp production up in the fourth quarter. "The use of our Adaptive power amplifier module represents the next step in our strategy to provide the most integrated solutions based upon InGaP HBT technology," said Tamer Husseini, Celeritek s president and chief executive officer. "While it would be premature to estimate the impact of this order on the current year s revenue, we believe this design win is critical for our future growth." RF Nitro in global distribution tie-up RF Nitro Communications has signed a global distribution deal with Richardson Electronics, a supplier of RF and microwave components. The agreement covers RF Nitro s broadband InGaP/GaAs HBT products and power amplifier MMICs (see Compound Semiconductor June 2001, page 23). Richardson will also stock die-level products and high-frequency evaluation boards for testing amplifier and transistor prototypes. "RF Nitro s current high-performance products will effectively fill a market niche in the 620 GHz range, and its broadband products will address customer demands in the fiber-optic communications area," said Chris Marshall of Richardson. "We are also excited about the potential of RF Nitro s developing GaN technology." RF Nitro supplies GaN epitaxial materials for the microelectronics market and is developing 4 inch GaN wafer technology to produce amplifiers for high-power, high-frequency applications.