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Hitachi confirms 3-inch GaN substrate, eyes 4-inch

Researchers from Hitachi Cable tell compoundsemiconductor.net they have the technology to push back the current boundaries in GaN growth.

Hitachi Cable, Ltd., the materials-focused subsidiary of the well-known Japanese group, has confirmed its successful production of 3-inch diameter GaN substrates.

The enlargement relies upon the group s novel void-assisted-separation (VAS) technology.

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