News Article
Hitachi confirms 3-inch GaN substrate, eyes 4-inch
Researchers from Hitachi Cable tell compoundsemiconductor.net they have the technology to push back the current boundaries in GaN growth.
Hitachi Cable, Ltd., the materials-focused subsidiary of the well-known Japanese group, has confirmed its successful production of 3-inch diameter GaN substrates.
The enlargement relies upon the group s novel void-assisted-separation (VAS) technology.