Toshiba's GaN plan targets 'PA Porsche' mantle
by Andy Extance in Atlanta
The highest power GaN PA targeting the Ku-band frequency range, a 50 W HEMT from Toshiba, is now entering formal commercial production.
The Japanese conglomerate will also soon start distributing engineering samples of a 50 W GaN HEMT targeting the X-band, in the next stage of the company s transistor roadmap.
Speaking to compoundsemiconductor.net at the International Microwave Symposium in Atlanta on June 17, Toshiba said that high performance is the mainstay of its future RF technology plan.