Project will develop 'new GaN transistors'
A programme will enable new GaN transistors and integrated circuit technology to be developed, it has been asserted.
Dwight Streit, Northrop Grumman Aerospace Systems vice-president of electronics and sensors, made this comment after it was announced the company had been awarded a multi-million dollar contract.
The Defense Advanced Research Projects Agency has granted the firm with the first phase of a $28.9 million (£17.66 million) Nitride Electronic Next Generation Technology (Next) deal.
Mr Streit explained the new developments created as part of the scheme will enable high-performance analogue-to-digital converters to be produced for future advanced electronic systems.
Next programme manager Mike Wojtowicz explained the goal of the project is to "increase the operating frequency of GaN devices to 500 gigahertz while maintaining its high breakdown voltage in a large-scale integration process".
Northrop Grumman develops, integrates, produces and supports aircrafts, high-energy laser systems and microelectronics.
These systems are used in a number of contexts, including electronic warfare, missile defence, battle management and space exploration.
