News Article
Cree's MOSFET 'will help to boost GaN and SiC power device market'
IMS Research has identified Cree's SiC MOSFET as a device which will help to improve the value of the GaN and SiC power device market.
The gallium nitride (GaN) power device market will be worth over $160 million (£103 million) by 2013, according to a new report.
IMS Research has stated that the silicon carbide (SiC) and GaN power device market has an important three years ahead of it, backed, in part, by the arrival of the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) from Cree.
Josh Flood, research analyst at IMS Research, said that many applications "are forecast to begin to adopt these new power devices and other established power semiconductor suppliers have indicated they will be introducing new SiC and GaN power devices to the market in the near future".
This will mark a move away from 2009 where the only commercially available SiC power devices were junction gate field-effect transistor and Schottky diodes.
Power Electronics Technology previously selected Cree s SiC MOSFET as a product development which should be classed as "significant" and which puts Cree ahead of its compound semiconductor competition.
IMS Research has stated that the silicon carbide (SiC) and GaN power device market has an important three years ahead of it, backed, in part, by the arrival of the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) from Cree.
Josh Flood, research analyst at IMS Research, said that many applications "are forecast to begin to adopt these new power devices and other established power semiconductor suppliers have indicated they will be introducing new SiC and GaN power devices to the market in the near future".
This will mark a move away from 2009 where the only commercially available SiC power devices were junction gate field-effect transistor and Schottky diodes.
Power Electronics Technology previously selected Cree s SiC MOSFET as a product development which should be classed as "significant" and which puts Cree ahead of its compound semiconductor competition.
